參數(shù)資料
型號： STGD6NC60HDT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT
中文描述： N溝道6A條- 600V的DPAK封裝IGBT的非常快PowerMESH
文件頁數(shù)： 3/9頁
文件大?。?/td> 224K
代理商： STGD6NC60HDT4
3/9
STGD6NC60HD
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 6: Dynamic
Symbol
Parameter
g
fs
(1)
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
I
CL
Turn-Off SOA Minimum
Current
(1) Pulsed: Pulse duration= 300 μs, duty cycle 1.5%
Table 7: Switching On
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
Table 8: Switching Off
Symbol
t
r
(V
off
)
t
d
(
off
)
Table 9: Switching Energy
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25
°
C and 125
°
C)
(3) Turn-off losses include also the tail of the collector current.
Test Conditions
V
CE
= 15 V
,
I
C
= 3 A
V
CE
= 25 V, f= 1 MHz, V
GE
= 0
Min.
Typ.
TBD
Max.
Unit
S
320
pF
28
pF
7.2
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 390 V, I
C
= 3 A,
V
GE
= 15 V
(see Figure 5)
15
TBD
TBD
TBD
nC
nC
nC
V
clamp
= 480 V
,
Tj = 150
°
C
R
G
= 10
,
V
GE
= 15 V
TBD
A
Parameter
Test Conditions
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 25
°
C
(see Figure 3)
Min.
Typ.
Max.
Unit
ns
ns
A/μs
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
TBD
TBD
TBD
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 125
°
C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/μs
Parameter
Test Conditions
V
cc
= 390 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
T
J
= 25
°
C
(see Figure 3)
V
cc
= 390 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
Tj = 125
°
C
(see Figure 3)
Min.
Typ.
Max.
Unit
Off Voltage Rise Time
TBD
ns
Turn-off Delay Time
TBD
ns
t
f
Current Fall Time
70
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
TBD
ns
Turn-off Delay Time
TBD
ns
Current Fall Time
TBD
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Unit
Eon
(2)
E
off
(3)
E
ts
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 25
°
C
(see Figure 3)
TBD
TBD
TBD
μJ
μJ
μJ
Eon
(2)
E
off
(3)
E
ts
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15V, Tj= 125
°
C
(see Figure 3)
TBD
TBD
TBD
μJ
μJ
μJ
相關(guān)PDF資料
PDF描述
STGD7NC60HT4 N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT
STGP7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT
STGP10NB37LZ N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT
STGP20NB37LZ N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT
STGP20NC60V N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD6NC60HT4 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB120S-1 功能描述:IGBT 晶體管 N-CHANNEL 7A - 1200V IPAK POWERMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB120S-1_0008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT
STGD7NB120ST4 功能描述:IGBT 晶體管 N-Channel 7A-1200V IPAK PowerMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB60F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*