參數資料
型號： STGD6NC60HDT4
廠商： 意法半導體
英文描述： N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT
中文描述： N溝道6A條- 600V的DPAK封裝IGBT的非?？霵owerMESH
文件頁數： 2/9頁
文件大?。?/td> 224K
代理商： STGD6NC60HDT4
STGD6NC60HD
2/9
Table 3: Absolute Maximum ratings
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25
°
C (#)
I
C
Collector Current (continuous) at T
C
= 100
°
C (#)
I
CM
( )
Collector Current (pulsed)
I
F
Diode RMS Forward Current at T
C
= 25
°
C
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
T
stg
Storage Temperature
T
j
Operating Junction Temperature
( )
Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125
°
C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 μA
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A, Tc= 125
°
C
(#) Calculated according to the iterative formula:
Parameter
Value
Unit
600
V
20
V
±20
V
10
A
6
A
24
A
TBD
A
50
W
0.40
W/
°
C
–
55 to 150
°
C
Min.
Typ.
Max.
2.5
100
Rthj-case
Rthj-amb
T
L
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose (1.6 mm from
case, for 10 sec.)
°
C/W
°
C/W
°
C
275
Test Conditions
I
C
= 1 mA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25
°
C
10
1
μA
mA
V
GE
= ± 20V , V
CE
= 0
±100
nA
3.75
5.75
V
V
GE
= 15V, I
C
= 3 A
1.9
1.7
2.5
V
V
ICTC
)
–
C
–
)
TCIC
(
)
×
RTHJ
=
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參數描述
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STGD7NB120S-1_0008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT
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STGD7NB60F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
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