參數(shù)資料
型號： STGD6NC60HDT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT
中文描述： N溝道6A條- 600V的DPAK封裝IGBT的非?？霵owerMESH
文件頁數(shù)： 1/9頁
文件大?。?/td> 224K
代理商： STGD6NC60HDT4
1/9
TARGET SPECIFICATION
June 2005
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
STGD6NC60HD
N-CHANNEL 6A - 600V DPAK
Very Fast PowerMESH IGBT
Table 1: General Features
I
LOWER ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOSSES INCLUDE DIODE RECOVERY
ENERGY
I
LOWER C
RES
/C
IES
RATIO
I
HIGH FREQUENCY OPERATION
I
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
I
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY INVERTERS
I
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
I
MOTOR DRIVERS
Table 2: Order Code
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max) @25°C
I
C
@100°C
STGD6NC60HDT4
600 V
< 2.5
V
6 A
1
3
DPAK
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGD6NC60HDT4
GD6NC60HD
DPAK
TAPE & REEL
Rev. 1
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGD6NC60HT4 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB120S-1 功能描述:IGBT 晶體管 N-CHANNEL 7A - 1200V IPAK POWERMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB120S-1_0008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT
STGD7NB120ST4 功能描述:IGBT 晶體管 N-Channel 7A-1200V IPAK PowerMESH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGD7NB60F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
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