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參數(shù)資料
| 型號(hào)： | STD90N02L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 24V - 0.0052ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET |
| 中文描述： | N溝道24V的- 0.0052ohm -第60A條-的DPAK -像是iPak STripFET商標(biāo)第三功率MOSFET |
| 文件頁(yè)數(shù)： | 9/17頁(yè) |
| 文件大?。?/td> | 778K |
| 代理商： | STD90N02L |
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STD90N02L - STD90N02L-1
9/17
Appendix A
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the wotking
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
Very low RDS(on) to reduce conduction losses
Small Qgls to reduce the gate charge losses
Small Coss to reduce losses due to output capacitance
Small Qrr to reduce losses on SW1 during its turn-on
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source voltage to
avoid the cross conduction phenomenon.
The high side (SW1) device requires:
Small Rg and Lg to allow higher gate current peak and to limit the voltage feedback on the
gate
Small Qg to have a faster commutation and to reduce gate charge losses
Low RDS(on) to reduce the conduction losses
Figure 14.
Synchronous buck converter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD90NH02L-1 | N-channel 24V - 0.0052ohm - 60A - DPAK/IPAK STripFET TM Power MOSFET |
| STD90NH02L | N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET⑩ III POWER MOSFET |
| STD93003 | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| STD9N10L | N-Channel 100V-0.22Ω-9A-IPAK/DPAK Power MOS Transistor(N溝道功率MOS晶體管) |
| STD9N10 | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率ＭＯＳ晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD90N02L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET? III Power MOSFET |
| STD90N02L-1 | 功能描述:MOSFET N Ch 24V 0.0068 Ohm 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD90N03L | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD90N03L-1 | 功能描述:MOSFET N-Channel 30V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD90N4F3 | 功能描述:MOSFET N-Channel 40V 5.4 mOhms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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