參數(shù)資料
型號(hào): STD9N10
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOS晶體管)
中文描述: N溝道增強(qiáng)模式功率MOS晶體管(不適用溝道增強(qiáng)模式功率馬鞍山晶體管)
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 128K
代理商: STD9N10
STD9N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.23
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
±
20
9
V
V
GS
I
D
V
A
I
D
6
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
36
A
45
W
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
TYPE
V
DSS
R
DS(on)
< 0.27
I
D
STD9N10
100 V
9 A
March 1996
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
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STD9N10-1 制造商:STMicroelectronics 功能描述:
STD9N10L 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR
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STD9N10LT4 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA
STD9N10T4 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR