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參數(shù)資料
| 型號(hào)： | STD9N10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | STD9N10 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(see test circuit, figure 3)
V
DD
= 80 V
R
G
= 4.7
(see test circuit, figure 5)
V
DD
= 80 V
I
D
= 4.5 A
V
GS
= 10 V
10
40
15
60
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 9 A
V
GS
= 10 V
440
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 9 A
V
GS
= 10 V
15
6
5
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 80 V
R
G
= 4.7
(see test circuit, figure 5)
I
D
= 9 A
V
GS
= 10 V
15
25
50
25
35
70
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
9
36
A
A
V
SD
(
)
t
rr
I
SD
= 9 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 9 A
V
DD
= 20 V
(see test circuit, figure 5)
80
0.2
5
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimited by safe operating area
Safe OperatingArea
Thermal Impedance
STD9N10
3/10
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| STD9N10-1 | 制造商:STMicroelectronics 功能描述: |
| STD9N10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR |
| STD9N10L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-251AA |
| STD9N10LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA |
| STD9N10T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR |
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