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參數(shù)資料
| 型號(hào)： | STD93003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)PNP功率晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 295K |
| 代理商： | STD93003 |
STD93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
I
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
I
MEDIUM VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial
Planar
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD83003, its
complementary NPN transistor.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
Parameter
Value
-500
-400
V
(BR)EBO
Unit
V
V
V
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= -0.75 A, t
p
< 10
μ
s, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
-1.5
-3
-0.75
-1.5
20
-65 to 150
150
A
A
A
A
W
o
C
o
C
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/8
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