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參數(shù)資料
| 型號： | STB6NK60Z-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道600V的- 1ohm - 6A條TO-220/TO-220FP/D2PAK/I2PAK齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 578K |
| 代理商： | STB6NK60Z-1 |
STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
6A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
STP6NK60Z
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
6
6 (*)
A
3.8
3.8 (*)
A
Drain Current (pulsed)
24
24 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
110
32
W
0.88
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
3500
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220 / D
2
PAK /
I
2
PAK
1.14
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.2
°C/W
°C/W
°C
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
6
Unit
A
210
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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