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參數資料
| 型號： | STB70NF02L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| 中文描述： | N溝道20V的- 0.006歐姆-第70A D2PAK封裝，低柵極電荷STripFET功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | STB70NF02L |
STB70NF02L
N-CHANNEL 20V - 0.006
- 70A D
2
PAK
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.006
I
TYPICAL Q
g
= 36 nC @ 10V
I
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF
I
CONDUCTION LOSSESREDUCED
I
SWITCHING LOSSESREDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramountimportance.
APPLICATIONS
I
SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
20/01/2000
1
3
D
2
PAK
TO-263
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
20
V
20
V
±
20
70
V
A
I
D
50
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
280
A
100
W
0.67
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
TYPE
V
DSS
R
DS(on)
< 0.009
I
D
STB70NF02L
20 V
70 A
ADD SUFFIX ”T4”FOR ORDERING IN TAPE & REEL
1/6
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB70NF02LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 70A I(D) | TO-263AB |
| STB70NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET |
| STB70NF03L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET |
| STB70NF03L-1 | 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:MOSFET N-CH 30V 70A I2PAK |
| STB70NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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