參數(shù)資料
型號： STB75NF75L-1
廠商： 意法半導體
英文描述： N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
中文描述： N溝道75V的- 0.009歐姆- 75A條D2PAK/I2PAK/TO-220 STripFET⑩二功率MOSFET
文件頁數(shù)： 1/11頁
文件大小： 382K
代理商： STB75NF75L-1
1/11
April 2002
.
STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V - 0.009
- 75A D
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.009
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
.
APPLICATIONS
I
SOLENOID AND RELAY DRIVERS
I
DC MOTOR CONTROL
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB75NF75L/-1
STP75NF75L
75 V
75 V
<0.011
<0.011
75 A
75 A
1
2
3
1
3
123
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Current limited by package
(
)
Pulse width limited by safe operating area.
(1) I
≤
75A, di/dt
≤
500A/μs, V
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 37.5A, V
DD
Parameter
Value
75
75
± 15
75
70
300
300
2
20
680
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數(shù)
參數(shù)描述
STB75NF75LT4 功能描述:MOSFET N-Ch 75 Volt 75 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB75NF75T4 功能描述:MOSFET N-Ch, 75V-0.0095ohms 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB75NH02L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET⑩ III POWER MOSFET
STB75NH02L_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
STB75NH02LT4 功能描述:MOSFET N-Ch 24 Volt 75 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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