參數(shù)資料
型號(hào)： STB70NF3LLT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
中文描述： N溝道30V的- 0.0075歐姆- 70A條D2PAK/TO-220低柵極電荷STripFET二功率MOSFET
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 328K
代理商： STB70NF3LLT4
1/10
October 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF3LL@ B70NF3LL@
STB70NF3LL
STP70NF3LL
N-CHANNEL 30V - 0.0075
- 70A D
2PAK/TO-220
LOW GATE CHARGE STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0075
@ 10 V
I
OPTIMAL R
DS(on)
x Qg TRADE-OFF @ 4.5 V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique "Sin-
gle Feature Size" strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
I
SWITCHING APPLICATIONS
Ordering Information
SALES TYPE
STB70NF3LLT4
STP70NF3LL
TYPE
V
DSS
R
DS(on)
I
D
STB70NF3LL
STP70NF3LL
30 V
30 V
< 0.0095
< 0.0095
70 A
70 A
MARKING
B70NF3LL@
P70NF3LL@
PACKAGE
D
2
PAK
TO-220
PACKAGING
TAPE & REEL
TUBE
1
2
3
1
3
TO-220
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Current limited by the package
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
70A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 35A, V
DD
= 25V
Parameter
Value
30
30
± 16
70
50
280
100
0.67
5.5
500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB70NFS03L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER
STB70NFS03L_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
STB70NFS03LT4 功能描述:MOSFET N-Ch 30 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB70NH03L 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 30V 60A D2PAK
STB70NH03LT4 功能描述:MOSFET N-Ch 30 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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