參數(shù)資料
型號: STB15N25
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述: ? -通道增強型功率MOS器件
文件頁數(shù): 3/6頁
文件大?。?/td> 87K
代理商: STB15N25
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Time
Rise Time
V
DD
= 100 V I
D
= 15 A
R
G
= 9.1
V
GS
= 10 V
V
DD
= 160 V I
D
= 15 A
R
G
= 9.1
V
GS
= 10 V
V
DD
= 160 V I
D
= 15 A V
GS
= 10 V
20
75
ns
ns
A/
μ
s
Turn-on Current Slope
470
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
60
10
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 160 V I
D
= 15 A
R
G
= 9.1
V
GS
= 10 V
35
30
70
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
15
60
A
A
V
SD
(
)
t
rr
I
SD
= 15 A V
GS
= 0
I
SD
= 15 A di/dt = 100 A/
μ
s
V
R
= 100 V T
j
= 150
o
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
290
3
21
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STB15N25
3/6
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