參數(shù)資料
型號(hào)： STB160NF03L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET
中文描述： N溝道30V的- 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 431K
代理商： STB160NF03L
1/9
February 2001
STB160NF03L
N-CHANNEL 30V - 0.0021
- 160A D2PAK
STripFET POWER MOSFET
(1) Limited by Package
(2) I
SD
≤
100A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.0021
I
LOW THRESHOLD DRIVE
I
ULTRA LOW ON-RESISTANCE
I
VERY LOW GATE CHARGE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
“Single
Feature
APPLICATIONS
I
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
I
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB160NF03L
30 V
< 0.0030
160 A
Parameter
Value
Unit
30
V
30
V
±15
V
160
A
113
A
640
A
300
W
2
W/°C
2
J
–65 to 175
°C
175
°C
D
2
PAK
(TO-263)
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB160NF03LT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 160A I(D) | TO-263AB
STB160NF3LL 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET
STB160NF3LL_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET
STB160NF3LLT4 功能描述:MOSFET N-Ch 30 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB16N65M5 功能描述:MOSFET N-Ch MDMesh V 650V 0.270 Ohm 12A D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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