參數(shù)資料
型號(hào)： STB15N25
廠(chǎng)商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述： ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 87K
代理商： STB15N25
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
15
A
E
AS
40
mJ
E
AR
10
mJ
I
AR
10
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
250
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 125
o
C
V
GS
=
±
20 V
250
1000
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
μ
A
Static Drain-source On
Resistance
2
3
4
V
A
V
GS
= 10 V I
D
= 7.5 A
V
GS
= 10 V I
D
= 7.5 A T
c
= 100
o
C
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
0.25
0.5
I
D(on)
On State Drain Current
15
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 7.5 A
5
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1600
270
50
pF
pF
pF
STB15N25
2/6
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