參數(shù)資料
型號(hào)： STB15N25
廠(chǎng)商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述： ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 87K
代理商： STB15N25
STB15N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.2
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INPUT CAPACITANCE
I
LOW GATE CHARGE
I
LOW LEAKAGE CURRENT
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
I
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
250
V
250
±
20
15
V
V
A
I
D
10
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
60
A
125
W
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 0.25
I
D
STB15N25
250 V
15 A
March 1996
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/6
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參數(shù)描述
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