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參數資料
| 型號： | STB160NF02L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道20V的- 0.0018ohm - 160A章采用D2PAK STripFET⑩功率MOSFET |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | STB160NF02L |
1/7
PRELIMINARY DATA
February 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB160NF02L
N-CHANNEL 20V - 0.0018
- 160A D2PAK
STripFET POWER MOSFET
(1) Limited by Package
(2) I
SD
≤
100A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.0018
I
LOW THRESHOLD DRIVE
I
ULTRA LOW ON-RESISTANCE
I
VERY LOW GATE CHARGE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
“Single
Feature
APPLICATIONS
I
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
I
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB160NF02L
20 V
< 0.0027
160 A
Parameter
Value
Unit
20
V
20
V
±15
V
160
A
113
A
640
A
300
W
2
W/°C
2.65
mJ
–65 to 175
°C
175
°C
D
2
PAK
(TO-263)
1
3
INTERNAL SCHEMATIC DIAGRAM
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| STB18N20 | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強模式功率MOS晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB160NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET |
| STB160NF03LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 160A I(D) | TO-263AB |
| STB160NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET |
| STB160NF3LL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET |
| STB160NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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