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參數(shù)資料
| 型號(hào)： | SIB412DK-T1-GE3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 6.6 A, 20 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, SC-75, POWERPAK-6 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 221K |
| 代理商： | SIB412DK-T1-GE3 |
www.vishay.com
2
Document Number: 70439
S-80515-Rev. C, 10-Mar-08
Vishay Siliconix
SiB412DK
New Product
Notes:
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
DS
V
GS
= 0 V, I
D
= 250 μA
20
V
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
D
= 250 μA
20.9
mV/°C
- 2.82
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 6.6 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
GS
= 1.8 V, I
D
= 1.8 A
V
DS
= 10 V, I
D
= 6.6 A
0.35
1
V
Gate-Source Leakage
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
1
μA
10
On-State Drain Current
a
I
D(on)
15
A
Drain-Source On-State Resistance
a
R
DS(on)
0.028
0.034
Ω
0.033
0.040
0.045
0.054
Forward Transconductance
a
Dynamic
b
Input Capacitance
g
fs
23
S
C
iss
C
oss
C
rss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
535
pF
Output Capacitance
85
Reverse Transfer Capacitance
50
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 5 V, I
D
= 6.6 A
6.77
6.14
0.96
10.16
9.21
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.6 A
Gate-Source Charge
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Gate-Drain Charge
0.96
Gate Resistance
f = 1 MHz
3.6
Ω
Turn-On Delay Time
V
DD
= 10 V, R
L
= 1.89
Ω
I
D
5.3 A, V
GEN
= 4.5 V, R
g
= 1
Ω
6.6
9.9
ns
Rise Time
16
24
Turn-Off Delay Time
50
75
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
14
21
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
9
A
Pulse Diode Forward Current
15
Body Diode Voltage
I
S
= 3.2 A, V
GS
= 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
I
F
= 3.2 A, di/dt = 100 A/μs, T
J
= 25 °C
9.82
14.7
ns
Body Diode Reverse Recovery Charge
3.47
5.2
nC
Reverse Recovery Fall Time
6.46
ns
Reverse Recovery Rise Time
3.36
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