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參數(shù)資料
| 型號： | SIB412DK-T1-GE3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 6.6 A, 20 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, SC-75, POWERPAK-6 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 221K |
| 代理商： | SIB412DK-T1-GE3 |
Vishay Siliconix
SiB412DK
New Product
Document Number: 70439
S-80515-Rev. C, 10-Mar-08
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET
Power MOSFET
New Thermally Enhanced PowerPAK
SC-75 Package
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
Load Switch, PA Switch and Battery Switch for Portable
Devices
DC/DC Converter
PRODUCT SUMMARY
V
DS
(V)
0.034 at V
GS
= 4.5 V
0.040 at V
GS
= 2.5 V
0.054 at V
GS
= 1.8 V
R
DS(on)
(
Ω
)
I
D
(A)
9
a
9
a
9
a
Q
g
(Typ.)
20
6.14 nC
PowerPAK SC-75-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
1.60 mm
1.60 mm
Markin
g
Code
X X X
A A X
Lot Tracea
b
ility
and Date code
Part # code
Orderin
g
Information:
SiB412DK-T1-GE3 (Lead (P
b
)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 s.
d. See Solder Profile (
h
ttp://www.vishay.com/ppg73257
). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
Limit
20
± 8
9
a
9
a
6.6
b, c
5.29
b, c
20
9
a
2
b, c
13
8.4
2.4
b, c
1.6
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
D
A
Pulsed Drain Current
I
DM
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
t
≤
5 s
°C/W
Steady State
RoHS
COMPLIANT
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| SIB415DK-T1-GE3 | 功能描述:MOSFET 30V 9.0A 13W 87mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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