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參數(shù)資料
| 型號： | Si9910 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Adaptive Power MOSFET Driver(可調(diào)功率MOSFET驅(qū)動器) |
| 中文描述： | 自適應(yīng)功率MOSFET驅(qū)動器（可調(diào)功率MOSFET的驅(qū)動器） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 117K |
| 代理商： | SI9910 |
Si9910
Vishay Siliconix
S-60752—Rev. F, 05-Apr-99
4
FaxBack 408-970-5600, request 70009
www.siliconix.com
Pin 7: PULL-DOWN
Pin 8: PULL-UP
Pull-up and pull-down outputs collectively provide the power
MOSFET gate with charging and discharging currents. Turn
“on” or “off” di/dt can be limited by adding resistance (R
2
) in
series with the appropriate output.
APPLICATIONS
“Floating” High-Side Drive Applications
As demonstrated in Figure 1, the Si9910 is intended for use
as both a ground-referenced gate driver and as a “high-side”
or source-referenced gate driver in half-bridge applications.
Several features of the Si9910 permit its use in half-bridge
high-side drive applications.
A simple and inexpensive method of isolating a floating supply
to power the Si9910 in high-side driver applications had to be
provided. Therefore, the Si9910 was designed to be
compatible with two of the most commonly used floating
supply techniques: the bootstrap and the charge pump. Both
of these techniques have limitations when used alone. A
properly designed bootstrap circuit can provide low-
impedance drive which minimizes transition losses and the
charge pump circuit provides static operation.
The Si9910 is configured to take advantage of either floating
supply technique if the application is not sensitive to their
particular limitations, or both techniques if switching losses
must be minimized and static operation is necessary. The
schematic above illustrates both the charge pump and
bootstrap circuits used in conjunction with an Si9910 in a
high-side driver application.
Input signal level shifting is accomplished with a passive pull-
up (R4) and n-channel MOSFET (Q2) for pull-down in
applications below 500 V. Total node capacitance defines the
value of R4 needed to guarantee an input transition rate which
safely exceeds the maximum dv/dt rate of the output half-
bridge. Using level-shift devices with higher current
capabilities may necessitate the addition of current-limiting
components such as R5.
Bootstrap Undervoltage Lockout
When using a bootstrap capacitor as a high-side floating
supply, care must be taken to ensure time is available to
recharge the bootstrap capacitor prior to turn-on of the high-
side MOSFET. As a catastrophic protection against abnormal
conditions such as start-up, loss of power, etc., an internal
voltage monitor has been included which monitors the
bootstrap voltage when the Si9910 is in the low state. The
Si9910 will not respond to a high input signal until the voltage
on the bootstrap capacitor is sufficient to fully enhance the
power MOSFET gate. For more details, please refer to
Application Note AN705, which may
be obtained via FaxBack,
request document #70579.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9910_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Adaptive Power MOSFET Driver |
| SI9910DJ | 功能描述:功率驅(qū)動器IC MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9910DJ-E3 | 功能描述:功率驅(qū)動器IC MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9910DJ-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Adaptive Power MOSFET Driver1 |
| SI9910DY | 功能描述:功率驅(qū)動器IC MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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