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參數(shù)資料
| 型號(hào)： | SI9926DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | SI9926DY |
SPICE Device Model Si9926BDY
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72413
01-Jun-04
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9934BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI9934BDY-T1-E3 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI9934BDY-E3 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI9934DY | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| SI9936BDY | SPICE Device Model Si9936BDY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9926DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin SOIC N T/R |
| SI9928DY | 功能描述:MOSFET 20V 5/3.4A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9928DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 5A/3.4A 8-Pin SOIC N T/R |
| SI9933ADY | 功能描述:MOSFET SO8 DUAL PCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9933ADY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 3.4A 8-Pin SOIC N T/R |
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