- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368623 > SI9936BDY (Vishay Intertechnology,Inc.) SPICE Device Model Si9936BDY PDF資料下載
參數(shù)資料
| 型號(hào)： | SI9936BDY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | SPICE Device Model Si9936BDY |
| 中文描述： | 器件的SPICE模型Si9936BDY |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | SI9936BDY |
SPICE Device Model Si9936BDY
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72573
02-Jun-04
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9936DY | N-channel enhancement mode field-effect transistor |
| SI9936DY | D2VW STD Lever (Ext) |
| SI9939DY | Complimentary 30-V (D-S) MOSFET |
| SI9942DY | Complimentary 20-V (D-S) MOSFET |
| SI9948AEY | Dual P-Channel 60-V (D-S), 175C MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9936BDY_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI9936BDY-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 4.5A 8-Pin SOIC N |
| SI9936BDY-T1-E3 | 功能描述:MOSFET 30V 6.0A 0.035Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9936BDY-T1-GE3 | 功能描述:MOSFET 30V 6.0A 2.0W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9936D4 | 制造商:Vishay Siliconix 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。