參數(shù)資料
型號: SI9936BDY
廠商: Vishay Intertechnology,Inc.
英文描述: SPICE Device Model Si9936BDY
中文描述: 器件的SPICE模型Si9936BDY
文件頁數(shù): 2/3頁
文件大?。?/td> 179K
代理商: SI9936BDY
SPICE Device Model Si9936BDY
Vishay Sil
iconix
www.vishay.com
2
Document Number: 72573
02-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.9
V
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
165
A
V
GS
= 10 V, I
D
= 6 A
0.027
0.028
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 4.9 A
0.038
0.041
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 6 A
13
12
S
Forward Voltage
a
Dynamic
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.80
0.80
V
Total Gate Charge
Q
g
8
8.6
Gate-Source Charge
Q
gs
1.8
1.8
Gate-Drain Charge
Q
gd
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6 A
1.5
1.5
nC
Turn-On Delay Time
t
d(on)
16
10
Rise Time
t
r
8
15
Turn-Off Delay Time
t
d(off)
23
25
Fall Time
t
f
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
G
= 6
6
10
ns
Notes
a.
b.
Pulse test; pulse width
300
μ
s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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