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參數資料
| 型號： | SI9926BDY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | 雙N溝道2.5V（G-S）MOSFET |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | SI9926BDY |
SPICE Device Model Si9926BDY
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72413
01-Jun-04
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
相關PDF資料 |
PDF描述 |
|---|---|
| SI9926ADY | Dual N-Channel 2.5-V (G-S) MOSFET |
| SI9926DY | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| SI9934BDY | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI9934BDY-T1-E3 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI9934BDY-E3 | Dual P-Channel 2.5-V (G-S) MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI9926BDY-E3 | 功能描述:MOSFET NCh Dual MOSFET 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9926BDYT1 | 制造商:Vishay Intertechnologies 功能描述: |
| SI9926BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R |
| SI9926BDY-T1-E3 | 功能描述:MOSFET 20 Volt 8.2 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9926BDY-T1-GE3 | 功能描述:MOSFET 20V 8.2A 2.0W 20mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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