參數(shù)資料
型號(hào): Si9910
廠商: Vishay Intertechnology,Inc.
英文描述: Adaptive Power MOSFET Driver(可調(diào)功率MOSFET驅(qū)動(dòng)器)
中文描述: 自適應(yīng)功率MOSFET驅(qū)動(dòng)器(可調(diào)功率MOSFET的驅(qū)動(dòng)器)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 117K
代理商: SI9910
Si9910
Vishay Siliconix
Si9910
FaxBack 408-970-5600, request 70009
www.siliconix.com
S-60752—Rev. F, 05-Apr-99
1
Adaptive Power MOSFET Driver
a
FEATURES
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface.
Very low quiescent current is provided by a CMOS buffer and
a high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t
rr
(diode reverse
recovery time) in a bridge configuration.
The Si9910 is available in 8-pin plastic DIP and SOIC
packages, and are specified over the industrial, D suffix (-40
to 85
°
C) temperature range.
FUNCTIONAL BLOCK DIAGRAM
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
t
rr
Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of
MOSFET Devices
Bootstrap and Charge Pump
Compatible (High-Side Drive)
a. Patent Number 484116.
Applications information may also be obtained via FaxBack, request document #70579.
Industrial and Office Automation
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