參數(shù)資料
型號： SI7403BDN
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述： P通道20 - V（下局副局長）MOSFET的低閾值
文件頁數(shù)： 3/8頁
文件大?。?/td> 115K
代理商： SI7403BDN
Si7403BDN
Vishay Siliconix
New Product
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
www.vishay.com
3
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 C
8
A
Pulse Diode Forward Current
I
SM
20
Body Diode Voltage
V
SD
I
S
=
2.6 A, V
GS
= 0 V
0.7
1.2
V
Body Diode Reverse Recovery Time
t
rr
20
40
ns
Body Diode Reverse Recovery Charge
Q
rr
= 4 1 A di/dt = 100 A/ s T
I
F
4.1 A, di/dt = 100 A/ s, T
J
= 25 C
8
16
nC
Reverse Recovery Fall Time
t
a
12
ns
Reverse Recovery Rise Time
t
b
8
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7403BDN-T1-E3 功能描述:MOSFET 20V 8.0A 9.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7403BDN-T1-GE3 功能描述:MOSFET 20V 8.0A 9.6W 74mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7403DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI7403DN-T1 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7404DN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET
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