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參數(shù)資料
| 型號： | SI7403BDN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | SI7403BDN |
FEATURES
TrenchFET Power MOSFET: 2.5-V Rated
RoHS Compliant
New PowerPAK Package
Low Thermal Resistance
Low 1.07-mm Profile
APPLICATIONS
Load Switching
PA Switching
Product Is
Completely
Pb-free
Si7403BDN
Vishay Siliconix
New Product
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
20
0.074 @ V
GS
=
4.5 V
0.110 @ V
GS
=
2.5 V
8
c
5 6 nC
5.6 nC
7.4
Ordering Information: Si7403BDN-T1—E3
S
G
D
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK
1212-8
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
20
V
8
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
8
c
7.2
5.1
a, b,
4.1
a, b
20
8
2.6
a, b
9.6
6.1
3.1
a, b
2
a, b
55 to 150
260
Continuous Drain Current
(T
J
= 150 C)
a, b
I
D
A
Pulsed Drain Current
I
DM
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
a, b
T
C
= 25 C
T
A
= 25 C
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
I
S
Maximum Power Dissipation
a, b
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
C
Notes:
a.
b.
c.
d.
Surface Mounted on 1” x 1” FR4 Board.
t = 5 sec
Package limited.
See Solder Profile (
http://www.vishay.com/doc73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7403BDN-T1-E3 | 功能描述:MOSFET 20V 8.0A 9.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7403BDN-T1-GE3 | 功能描述:MOSFET 20V 8.0A 9.6W 74mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7403DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7403DN-T1 | 功能描述:MOSFET 20V 4.5A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7404DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
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