- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368618 > SI7413DN-T1-E3 (Vishay Intertechnology,Inc.) P-Channel 20-V (D-S) MOSFET, Low-Threshold PDF資料下載
參數(shù)資料
| 型號： | SI7413DN-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SI7413DN-T1-E3 |
FEATURES
TrenchFET Power MOSFET
New PowerPAK Package
Low Thermal Resistance, R
thJC
Low 1.07-mm Profile
APPLICATIONS
Load Switch
Si7413DN
Vishay Siliconix
New Product
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.015 @ V
GS
=
4.5 V
13.2
20
0.020 @ V
GS
=
2.5 V
11.4
0.029 @ V
GS
=
1.8 V
9.5
P-Channel MOSFET
G
D
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7413DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
13.2
8.4
T
A
= 85 C
9.5
6.1
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 85 C
2.0
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
33
Steady State
65
81
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7439DP | P-Channel 150-V (D-S) MOSFET |
| Si7439DP-T1-E3 | P-Channel 150-V (D-S) MOSFET |
| SI7445DP | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7446DP | SPICE Device Model Si7446DP |
| SI7447DP | P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7413DN-T1-GE3 | 功能描述:MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7414DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI7414DN_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI7414DN-T1 | 功能描述:MOSFET 60V 8A 0.025 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7414DN-T1-E3 | 功能描述:MOSFET 60V 8A 0.025 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。