- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365547 > SI3900DV (Vishay Intertechnology,Inc.) Dual N-Channel 20-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI3900DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙N通道20V（D-S）MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | SI3900DV |
Si3900DV
Vishay Siliconix
www.vishay.com
2
Document Number: 71178
S-03511
—
Rev. B, 16-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
V
DS
= 16 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
10
A
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
5
A
V
GS
= 4.5 V, I
D
= 2.4 A
0.100
0.125
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
=
1.0 A
0.160
0.200
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 2.4 A
5
S
Diode Forward Voltage
a
V
SD
I
S
= 1.05 A, V
GS
= 0 V
0.79
1.10
V
Dynamic
b
Total Gate Charge
Q
g
2.1
4.0
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 2.4 A
0.3
nC
Gate-Drain Charge
Q
gd
0.4
Turn-On Delay Time
t
d(on)
10
17
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
30
50
Turn-Off Delay Time
t
d(off)
I
D
14
25
ns
Fall Time
t
f
6
12
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.0 A, di/dt = 100 A/ s
30
50
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
= 4.5 thru 3.5 V
25 C
T
C
=
–
55 C
1.5 V
125 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
2.5 V
3 V
2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3909DV | Dual P-Channel 20-V (D-S) MOSFET |
| SI3911DV | Dual P-Channel MOSFET |
| SI3915DV | Dual P-Channel 12-V (D-S) MOSFET |
| SI3973DV | Dual P-Channel 12-V (D-S) MOSFET |
| SI3973DV-T1-E3 | Dual P-Channel 12-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3900DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET |
| SI3900DV_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET |
| SI3900DV-T1 | 功能描述:MOSFET 20V 2.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3900DV-T1-E3 | 功能描述:MOSFET 20V 2.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3900DV-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:MOSFET; TSOP6 20V Dual N-Channel (D-S) Trench |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。