- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365547 > SI3915DV (Vishay Intertechnology,Inc.) Dual P-Channel 12-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI3915DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SI3915DV |
Si3915DV
Vishay Siliconix
New Product
Document Number: 71299
S-01890—Rev. A, 28-Aug-00
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.120 @ V
GS
= –4.5 V
–2.5
–12
0.175 @ V
GS
= –2.5 V
–2.0
0.240 @ V
GS
= –1.8 V
–1.7
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
–2.5
–2.0
A
T
A
= 70 C
–2.0
–1.7
Pulsed Drain Current
I
DM
–7
Continuous Source Current (Diode Conduction)
a
I
S
–1.05
–0.75
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.15
0.83
W
T
A
= 70 C
0.73
0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
93
110
C/W
Steady State
130
150
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
75
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI3973DV | Dual P-Channel 12-V (D-S) MOSFET |
| SI3973DV-T1-E3 | Dual P-Channel 12-V (D-S) MOSFET |
| SI3983DV | Dual P-Channel 20-V (D-S) MOSFET |
| Si3983DV-T1-E3 | Dual P-Channel 20-V (D-S) MOSFET |
| SI4308DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI3915DV-T1 | 功能描述:MOSFET 12V 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3915DV-T1-E3 | 功能描述:MOSFET 12V 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3932DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET |
| SI3932DV-T1-GE3 | 功能描述:MOSFET 30V 3.7A DUAL N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si3935U | 制造商:SILICON LABS ISOLATION 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。