參數(shù)資料
型號: Si3983DV-T1-E3
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual P-Channel 20-V (D-S) MOSFET
中文描述: 雙P溝道20 - V(下局副局長)MOSFET的
文件頁數(shù): 1/5頁
文件大?。?/td> 55K
代理商: SI3983DV-T1-E3
FEATURES
TrenchFET Power MOSFET
Symetrical Dual P-Channel
APPLICATIONS
Battery Switch For Portable Devices
Computers
Bus Switch
Load Switch
Si3983DV
Vishay Siliconix
New Product
Document Number: 72316
S-40575—Rev. C, 29-Mar-04
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.110 @ V
GS
=
4.5 V
2.5
20
0.145 @ V
GS
=
2.5 V
2.0
0.220 @ V
GS
=
1.8 V
1.0
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
S
1
G
1
D
1
P-Channel MOSFET
Ordering Information: Si3983DV-T1—E3
Marking Code: MDxxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
2.5
2.1
T
A
= 70 C
2.0
1.7
A
Pulsed Drain Current
I
DM
8
Continuous Diode Current (Diode Conduction)
a
I
S
1.05
0.75
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.15
0.83
W
T
A
= 70 C
0.73
0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
93
110
Steady State
130
150
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
90
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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