參數(shù)資料
型號(hào)： SI4340DY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道20 - V（下局副局長(zhǎng)）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 102K
代理商： SI4340DY
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
APPLICATIONS
DC/DC Converters
- Game Stations
- Notebook PC Logic
Si4340DY
Vishay Siliconix
New Product
Document Number: 72376
S-31857—Rev. A, 15-Sep-03
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Channel 1
Channel-1
0.012 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
0.010 @ V
GS
= 10 V
0.0115 @ V
GS
= 4.5 V
9.6
20
7.8
Channel 2
Channel-2
13.5
12.8
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
20
0.53 V @ 3 A
2.0
D
1
S
1
D
1
S
1
G
1
D
2
G
2
D
2
SO-14
11
12
13
14
Top View
2
3
4
1
G
2
S
2
G
1
S
1
D
1
D
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
Schottky Diode
S
2
D
2
S
2
D
2
S
2
D
2
8
9
10
5
6
7
Ordering Information:
Si4340DY
Si4340DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
V
Gate-Source Voltage
20
16
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
9.6
7.3
13.5
9.5
7.7
5.8
10.8
7.5
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
40
50
1.8
1.04
2.73
1.30
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.14
3.0
1.43
W
1.28
0.73
1.9
0.91
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
53
62.5
35
42
40
48
Steady-State
92
110
72
87
76
93
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
35
42
18
23
21
25
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4340DY-T1 Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4348DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4348DY-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4340DY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4340DY-T1-E3 功能描述:MOSFET DUAL N-CH 20V (D-S) W/ SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4346DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4346DY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4346DY-T1-E3 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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