參數(shù)資料
型號: SI4348DY-T1-E3
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁數(shù): 1/5頁
文件大?。?/td> 69K
代理商: SI4348DY-T1-E3
FEATURES
TrenchFET Gen II Power MOSFET
APPLICATIONS
High-Side DC/DC Conversion
Notebook
Desktop
Server
Notebook Logic DC/DC, Low-Side
Si4348DY
Vishay Siliconix
New Product
Document Number: 72790
S-40438—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0125 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
11
10
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4348DY—E3 (Lead Free)
Si4348DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
11
8.0
T
A
= 70 C
8.9
6.5
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
2.2
1.20
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.31
W
T
A
= 70 C
1.6
0.84
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
43
50
Steady State
74
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
19
25
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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