參數(shù)資料
型號: SI4401DY
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 40-V (D-S) MOSFET
中文描述: P通道40 - V(下局副局長)MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 37K
代理商: SI4401DY
Si4401DY
Vishay Siliconix
New Product
Document Number: 71226
S-03452—Rev. C, 09-Apr-01
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0155 @ V
GS
= –10 V
–10.5
–40
0.0225 @ V
GS
= –4.5 V
–8.7
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S S S
G
D
D
D
D
P-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–40
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
–10.5
–8.7
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
–8.3
–5.9
Pulsed Drain Current
I
DM
–50
A
continuous Source Current (Diode Conduction)
a
I
S
–2.7
–1.36
T
A
= 25 C
3.0
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.9
0.95
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
33
42
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
84
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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