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參數(shù)資料
| 型號(hào)： | SI4401DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 40-V (D-S) MOSFET |
| 中文描述： | P通道40 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | SI4401DY |
Si4401DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71226
S-03452
—
Rev. C, 09-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
V
DS
=
–
32 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
32 V, V
GS
= 0 V, T
J
= 70 C
–
10
A
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
10 V
–
30
A
V
GS
=
–
10 V, I
D
=
–
10.5 A
0.013
0.0155
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
4.5 V, I
D
=
–
8.7 A
0.0185
0.0225
Forward Transconductance
a
g
fs
V
DS
=
–
15
V, I
D
=
–
10.5 A
26
S
Diode Forward Voltage
a
V
SD
I
S
=
–
2.7 A, V
GS
= 0 V
–
0.74
–
1.1
V
Dynamic
b
Total Gate Charge
Q
g
37.5
50
Gate-Source Charge
Q
gs
V
DS
=
–
15 V,
V
GS
=
–
5 V, I
D
=
–
10.5 A
14.3
nC
Gate-Drain Charge
Q
gd
10.7
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
=
–
15 V, R
= 15
–
1 A, V
GEN
=
–
10 V, R
G
= 6
18
30
Turn-Off Delay Time
t
d(off)
I
D
122
190
ns
Fall Time
t
f
55
85
Gate Resistance
R
g
3.8
Source-Drain Reverse Recovery Time
t
rr
I
F
=
–
2.1 A, di/dt = 100 A/ s
45
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 10 thru 5 V
T
C
= 125 C
–
55 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
4 V
3 V
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| SI4401DY-E3 | 功能描述:MOSFET 40V 10.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4401DY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Leaded Process Compati |
| SI4401DY-T1 | 功能描述:MOSFET 40V 10.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4401DY-T1-E3 | 功能描述:MOSFET 40V 10.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4401DY-T1-GE3 | 功能描述:MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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