參數(shù)資料
型號(hào)： SI4348DY
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/5頁
文件大?。?/td> 69K
代理商： SI4348DY
FEATURES
TrenchFET Gen II Power MOSFET
APPLICATIONS
High-Side DC/DC Conversion
Notebook
Desktop
Server
Notebook Logic DC/DC, Low-Side
Si4348DY
Vishay Siliconix
New Product
Document Number: 72790
S-40438—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0125 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
11
10
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4348DY—E3 (Lead Free)
Si4348DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
11
8.0
T
A
= 70 C
8.9
6.5
A
Pulsed Drain Current
I
DM
40
Continuous Source Current (Diode Conduction)
a
I
S
2.2
1.20
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.31
W
T
A
= 70 C
1.6
0.84
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
43
50
Steady State
74
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
19
25
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4348DY-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4348DY-T1-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4364DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4366DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4390DY N-Channel Qg, Fast Switching WFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4348DY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4348DY-T1-E3 功能描述:MOSFET 30V 11A 2.5W 12.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4354DY-E3 制造商:Vishay Intertechnologies 功能描述:
SI4354DY-T1-E3 功能描述:MOSFET 30V 9.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4354DY-T1-GE3 功能描述:MOSFET 30V 9.5A 2.5W 16.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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