參數(shù)資料
型號(hào)： Si4336DY-T1
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 59K
代理商： SI4336DY-T1
FEATURES
Ultra Low On-Resistance Using High Density
TrenchFET Gen II Power MOSFET Technology
Q
g
Optimized
100% R
g
Tested
APPLICATIONS
Synchronous Buck Low-Side
Notebook
Server
Workstation
Synchronous Rectifier, POL
Si4336DY
Vishay Siliconix
Document Number: 72417
S-41795—Rev. B, 04-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
30
0.00325 @ V
GS
= 10 V
0.0042 @ V
GS
= 4.5 V
25
36
22
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4336DY
Si4336DY-T1 (with Tape and Reel)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
25
17
T
A
= 70 C
20
13
Pulsed Drain Current (10 s Pulse Width)
I
DM
70
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.3
Avalanche Current
L = 0.1 mH
I
AS
50
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.5
1.6
W
T
A
= 70 C
2.2
1
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
29
35
Steady State
67
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4340DY Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4340DY-T1 Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4348DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4348DY-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4348DY-T1-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4336DY-T1-E3 功能描述:MOSFET 30V 25A 3.5W 3.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4340CDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI4340CDY-T1-E3 功能描述:MOSFET 20V 14.1/20A 3/5.4W 9.4/8.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4340CDY-T1-GE3 制造商:Vishay Siliconix 功能描述:MOSFET NN CH SCH DIODE 20V SO14 制造商:Vishay Siliconix 功能描述:MOSFET, NN CH, SCH DIODE, 20V, SO14
SI4340DDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*