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參數(shù)資料
| 型號： | SI3909DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 248K |
| 代理商： | SI3909DV |
Vishay Siliconix
SPICE Device Model Si3909DV
Dual P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
S-50836
Rev. B, 16-May-05
1
www.vishay.com
Document Number: 71511
相關(guān)PDF資料 |
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| SI3911DV | Dual P-Channel MOSFET |
| SI3915DV | Dual P-Channel 12-V (D-S) MOSFET |
| SI3973DV | Dual P-Channel 12-V (D-S) MOSFET |
| SI3973DV-T1-E3 | Dual P-Channel 12-V (D-S) MOSFET |
| SI3983DV | Dual P-Channel 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3909DV-T1 | 功能描述:MOSFET 20V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3909DV-T1-E3 | 功能描述:MOSFET 20V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3909DV-T1-GE3 | 功能描述:MOSFET 20V 1.8A 1.15W 200mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI390M100 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
| SI390M16 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
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