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參數(shù)資料
型號: SI3232DCX-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 85/128頁
文件大小: 0K
描述: DAUGHTER CARD W/DISCRETE INTRFC
標準包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3232
已供物品: 板,CD
Si3232
6
Preliminary Rev. 0.96
Not
Recommended
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Table 3. Power Supply Characteristics1
(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD1–VDD4
Supply Current
(Si3232)
IVDD1–IVDD4
Sleep mode, RESET = 0
1
mA
Open (high impedance)
15
mA
Active on-hook standby
15
mA
Forward/reverse active off-hook
ABIAS = 4 mA
20
mA
Forward/reverse active OHT
OBIAS = 4 mA
12 +
ILIM
mA
Ringing, VRING =45Vrms,
VBAT = –70 V, Sine Wave, 1 REN load
—28—
mA
VDD Supply
Current (Si3200)
IVDD
Sleep mode, RESET = 0
100
A
Open (high impedance)
100
A
Active on-hook standby
110
A
Forward/reverse active off-hook,
ABIAS = 4 mA, VBAT =–24 V
—110
A
Forward/reverse OHT, OBIAS = 4 mA,
VBAT =–70 V
—110
A
Ringing, VRING =45Vrms,
VBAT = –70 V, Sine Wave, 7 REN load
—110
A
VBAT Supply
Current (Si3200)
IVBAT
Sleep mode, RESET = 0, VBAT =–70 V
100
A
Open (high impedance), VBAT = –70 V
225
A
Active on-hook standby, VBAT = –70 V
400
A
Forward/reverse active off-hook,
ABIAS = 4 mA, VBAT =–24 V
4.4 +
ILIM
—mA
Forward/reverse OHT, OBIAS = 4 mA,
VBAT =–70 V
—8.4
mA
Ringing, VRING =45Vrms,
VBAT = –70 V, Sine wave, 1 REN load
—6—
mA
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILIM term.
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