參數(shù)資料
型號: SI3232DCX-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 109/128頁
文件大?。?/td> 0K
描述: DAUGHTER CARD W/DISCRETE INTRFC
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3232
已供物品: 板,CD
Si3232
Preliminary Rev. 0.96
81
Not
Recommended
fo
r N
ew
D
esi
gn
s
Reset settings = 0x00
POLREV: Polarity Reversal Settings (Register Address 7)
(Register type: Initialization)
Bit
D7
D6
D5D4D3
D2
D1D0
Name
POLREV
VOCZERO
PREN
RAMP
Type
RR/W
R/W
Bit
Name
Function
7:4
Reserved
Read returns zero.
3POLREV
Polarity Reversal Status.
0 = Forward polarity.
1=Reverse polarity.
2VOCZERO
Wink Function Control.
Enables a wink function by decrementing the open circuit voltage to zero.
0 = Maintain current VOC value.
1 = Decrement VOC voltage to 0 V.
1PREN
Smooth Polarity Reversal Enable.
0=Disabled.
1 = Enabled.
0RAMP
Smooth Polarity Reversal Ramp Rate.
0=1V/1.25ms ramp rate.
1=2V/1.25ms ramp rate.
RAMADDR: RAM Address (Register Address 103)
(Register type: Operational/single value instance for both channels)
Bit
D7D6D5D4D3D2
D1
D0
Name
RAMADDR[7:0]
Type
R/W
Bit
Name
Function
7:0
RAMADDR[7:0] RAM Data—Low Byte.
A write to RAMDAT followed by a write to RAMADDR places the contents of RAMDAT
into a RAM location specified by the RAMADDR at the next memory update (WRITE
operation). Writing RAMADDR loads the data stored in RAMADDR into RAMDAT only at
the next memory update (READ operation).
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