Si3232
Preliminary Rev. 0.96
11
Not
Recommended
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Table 6. Monitor ADC Characteristics
(VDD, VDD1–VDD4 = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Resolution
—
8
—
Bits
Differential Nonlinearity
DNL
—
–1.0
±0.75
—
+1.5
LSB
Integral Nonlinearity
INL
—
±0.6
±1.5
LSB
Gain Error
—
±0.1
±0.25
LSB
Table 7. Si3200 Characteristics
(VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TIP/RING Pulldown Transistor
Saturation Voltage
VCM
VRING – VBAT (Forward),
VTIP – VBAT (Reverse)
ILIM =22mA, IABIAS =4mA
ILIM =45mA, IABIAS =16mA
3
4
—
V
TIP/RING Pullup Transistor
Saturation Voltage
VOV
GND – VTIP (Forward)
GND – VRING (Reverse)
3
—
V
Battery Switch Saturation
Impedance
RSAT
(VBAT – VBATH)/IOUT (Note 2) 15
W
OPEN State TIP/RING Leakage
Current
ILKG
RL =0
100
A
Internal Blocking Diode Forward
Voltage
VF
0.8
V
Notes:
1. VAC = 2.5 VPK, RLOAD = 600 .
2. IOUT =60mA