參數(shù)資料
型號: SI3216MDC1-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 41/122頁
文件大?。?/td> 0K
描述: DAUGHTER CARD W/SI3201 INTERFACE
標(biāo)準(zhǔn)包裝: 1
Si3216
Rev. 1.0
25
Not
Recommended
fo
r N
ew
D
esi
gn
s
Figure 15. Si321x Optional Equivalent Q5, Q6 Bias Circuit
Table 16. Si321xM MOSFET/Transformer DC-DC Converter Component Values
Component (s)
Value
Supplier
C9
10 F, 100 V, Electrolytic, ±20%
Panasonic
C14*
0.1 F, X7R, ±20%
Murata, Johanson, Novacap, Venkel
C25*
10 F, Electrolytic, ±20%
Panasonic
C27
470 pF, 100 V, X7R, ±20%
Murata, Johanson, Novacap, Venkel
R17
200 k
, 1/10 W, ±5%
R18
1/4 W, ±5% (See “AN45: Design Guide for the Si3210 DC-
DC Converter”
or Table 19 for value selection)
R19,R20
1/10 W, ±1% (See AN45 or Table 19
for value selection)
R22
22
, 1/10 W, ±5%
F1
Fuse
Belfuse SSQ Series
D1
Ultra Fast Recovery 200 V, 1A Rectifier
General Semi ES1D; Central Semi
CMR1U-02
T1
Power Transformer
Coiltronic CTX01-15275;
Datatronics SM76315;
Midcom 31353R-02
M1
100 V, Logic Level Input MOSFET
Intl Rect. IRLL014N; Intersil
HUF76609D3S; ST Micro
STD5NE10L, STN2NE10L
*Note: Voltage rating of this device must be greater than VDC.
R7
80.6
RRE
C7
100 nF
CRBN
Q4
5401
QTDN
C8
CTBN
100 nF
Q5
5551
QRP
R23
3.0k
RRBN0
R24
3.0k
RTBN0
Q3
5401
QRDN
R6
80.6
RTE
R12
5.1k
RRBN
R13
5.1k
RTBN
Q6
5551
QTN
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