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參數(shù)資料
型號： SI3210PPTX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 2/148頁
文件大?。?/td> 0K
描述： BOARD EVALUATION FOR SI3210
標準包裝： 1
Si3210/Si3211
10
Rev. 1.61
Not
Recommended
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Table 4. Linefeed Characteristics
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Loop Resistance Range*
RLOOP
See *Note.
0
—
160
DC Loop Current Accuracy
ILIM = 29 mA, ETBA = 4 mA
–10
—
10
%
DC Open Circuit Voltage
Accuracy
Active Mode; VOC =48V,
VTIP – VRING
–4
—
4
V
DC Differential Output
Resistance
RDO
ILOOP < ILIM
—160
—
DC Open Circuit Voltage—
Ground Start
VOCTO
IRING<ILIM; VRING wrt ground
VOC =48 V
–4
—
4
V
DC Output Resistance—
Ground Start
RROTO
IRING<ILIM; RING to ground
—160
—
DC Output Resistance—
Ground Start
RTOTO
TIP to ground
150
—
k
Loop Closure/Ring Ground
Detect Threshold Accuracy
ITHR = 11.43 mA
–20
—
20
%
Ring Trip Threshold
Accuracy
ITHR = 40.64 mA
–10
—
10
%
Ring Trip Response Time
User Programmable Register 70
and Indirect Register 36
———
Ring Amplitude
VTR
5 REN load; sine wave;
RLOOP =160 VBAT = –75 V
44
—
Vrms
Ring DC Offset
ROS
Programmable in Indirect
Register 19
0—
—
V
Trapezoidal Ring Crest
Factor Accuracy
Crest factor = 1.3
–.05
—
.05
Sinusoidal Ring Crest
Factor
RCF
1.35
—
1.45
Ringing Frequency Accuracy
f = 20 Hz
–1
—
1
%
Ringing Cadence Accuracy
Accuracy of ON/OFF Times
–50
—
50
ms
Calibration Time
CAL to CAL Bit
—
600
ms
Power Alarm Threshold
Accuracy
At Power Threshold = 300 mW
–25
—
25
%
*Note:
DC resistance round trip; 160
corresponds to 2 kft, 26 gauge AWG.
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