- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365451 > S71WS512N80BAIZZ3 (Spansion Inc.) Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt PDF資料下載
參數(shù)資料
| 型號： | S71WS512N80BAIZZ3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動存儲芯片的CMOS 1.8伏特 |
| 文件頁數(shù)： | 36/142頁 |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BAIZZ3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當(dāng)前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁
36
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
S71WS512NE0BFWZZ_00_ A1 June 28, 2004
A d v a n c e I n f o r m a t i o n
RESET# may be tied to the system reset circuitry. A system reset would thus also
reset the Flash memory, enabling the system to read the boot-up firmware from
the Flash memory.
If RESET# is asserted during a program or erase operation, the device requires
a time of t
RP
+t
RP
(during Embedded Algorithms) before the device is ready to
read data again. If RESET# is asserted when a program or erase operation is not
executing, the reset operation is completed within a time of t
RP
(not during Em-
bedded Algorithms). The system can read data t
RH
after RESET# returns to V
IH
.
Refer to the "
Hardware Reset (RESET#)
" section for RESET# parameters and to
Figure 20
for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is disabled. The outputs are
placed in the high impedance state.
SecSi (Secured Silicon) Sector Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides an extra Flash memory re-
gion that enables permanent part identification through an Electronic Serial
Number (ESN). The SecSi Sector is 256 words in length. All reads outside of the
256 word address range will return non-valid data. The Factory Indicator Bit
(DQ7) is used to indicate whether or not the Factory SecSi Sector is locked when
shipped from the factory. The Customer Indicator Bit (DQ6) is used to indicate
whether or not the Customer SecSi Sector is locked when shipped from the fac-
tory. The Factory SecSi bits are permanently set at the factory and cannot be
changed, which prevents cloning of a factory locked part. This ensures the secu-
rity of the ESN and customer code once the product is shipped to the field.
The Factory portion of the SecSi Sector is locked when shipped and the Customer
SecSi Sector that is either locked or is lockable. The Factory SecSi Sector is al-
ways protected when shipped from the factory, and has the Factory Indicator Bit
(DQ7) permanently set to a “1”. The Customer SecSi Sector is typically shipped
unprotected, allowing customers to utilize that sector in any manner they choose.
The Customer Indicator Bit set to “0.” Once the Customer SecSi Sector area is
protected, the Customer Indicator Bit will be permanently set to “1.”
The system accesses the SecSi Sector through a command sequence (see the
"
Enter SecSi Sector/Exit SecSi Sector Command Sequence
" section). After the
system has written the Enter SecSi Sector command sequence, it may read the
SecSi Sector by using the addresses normally occupied by the memory array. This
mode of operation continues until the system issues the Exit SecSi Sector com-
mand sequence, or until power is removed from the device. While SecSi Sector
access is enabled, Memory Array read access, program operations, and erase op-
erations to all sectors other than SA0 are also available. On power-up, or
following a hardware reset, the device reverts to sending commands to the nor-
mal address space.
Factory Locked: Factor SecSi Sector Programmed and Protected
At the Factory
In a factory sector locked device, the Factory SecSi Sector is protected when the
device is shipped from the factory. The Factory SecSi Sector cannot be modified
in any way. The device is pre programmed with both a random number and a se-
cure ESN. The Factory SecSi Sector is located at addresses 000000h–00007Fh.
The device is available pre programmed with one of the following:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S71WS512N80BAWZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71WS512N80BAWZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。