參數(shù)資料
型號: S71WS512N80BAIZZ3
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和移動存儲芯片的CMOS 1.8伏特
文件頁數(shù): 121/142頁
文件大?。?/td> 1996K
代理商: S71WS512N80BAIZZ3
June 28, 2004 S71WS512NE0BFWZZ_00_A1
128Mb pSRAM
121
P r e l i m i n a r y
TIMING DIAGRAMS (Continued)
Asynchronous Write Timing #2 (WE# Control)
Note:
This timing diagram assumes CE2=H and ADV#=L.
Asynchronous Write Timing #3-1 (WE# / LB# / UB# Byte Write Control)
Note:
This timing diagram assumes CE2=H, ADV#=L and OE#=H.
t
AS
ADDRESS
WE#
CE#1
t
WC
t
WR
t
WP
LB#, UB#
ADDRESS VALID
t
AS
t
WR
t
WP
VALID DATA INPUT
DQ
(Input)
t
DH
t
DS
OE#
t
OES
t
OHZ
t
WC
VALID DATA INPUT
t
DH
t
DS
Low
ADDRESS VALID
t
OHAH
t
AS
ADDRESS
WE#
CE#1
t
WC
t
BR
t
WP
LB#
ADDRESS VALID
t
AS
t
BR
t
WP
VALID DATA INPUT
DQ0-7
(Input)
t
DH
t
DS
UB#
t
WC
VALID DATA INPUT
t
DH
t
DS
Low
ADDRESS VALID
DQ8-15
(Input)
相關(guān)PDF資料
PDF描述
S71WS512N80BAWZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAWZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAWZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71WS512N80BAWZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAWZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAWZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt