- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192300 > S29GL128N11FFIVH2 (SPANSION LLC) 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL128N11FFIVH2 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 10 X 13 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 31/74頁 |
| 文件大小： | 1593K |
| 代理商： | S29GL128N11FFIVH2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當(dāng)前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁
May 1, 2006 S29GL-N_01_A0
S29GL-N
35
Data
She e t
10.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes,
and determine whether or not a sector is protected. Table 11.1 on page 46 and Table 11.3 on page 48 show
the address and data requirements. This method is an alternative to that shown in Table 8.4 on page 23,
which is intended for PROM programmers and requires VID on address pin A9. The autoselect command
sequence may be written to an address that is either in the read or erase-suspend-read mode. The autoselect
command may not be written while the device is actively programming or erasing.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The device then enters the autoselect mode. The system
may read at any address any number of times without initiating another autoselect command sequence:
A read cycle at address XX00h returns the manufacturer code.
Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code.
A read cycle to an address containing a sector address (SA), and the address 02h on A7–A0 in word mode
returns 01h if the sector is protected, or 00h if it is unprotected.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
device was previously in Erase Suspend).
10.4
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random
Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured
Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence.
The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 11.1
on page 46 shows the address and data requirements for both command sequences. See also Secured Silicon
Sector Flash Memory Region on page 29 for further information. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
10.5
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies the
programmed cell margin. Table 11.1 on page 46 and Table 11.3 on page 48 show the address and data
requirements for the word program command sequence.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to Write Operation Status on page 50 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that the
Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in
progress. Note that a hardware reset immediately terminates the program operation. The program
command sequence should be reinitiated once the device has returned to the read mode, to ensure data
integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming
to the same word address multiple times without intervening erases (incremental bit programming) is
permitted. Word programming is supported for backward compatibility with existing Flash driver software and
for occasional writing of individual words. Use of Write Buffer Programming is strongly recommended for
general programming use when more than a few words are to be programmed. The effective word
programming time using Write Buffer Programming is much shorter than the single word programming time.
Any bit cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to set DQ5
= 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding
read shows that the data is still 0. Only erase operations can convert a 0 to a 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29JL032J70TFI213 | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| S29PL032J65BFI150 | 2M X 16 FLASH 3V PROM, 65 ns, PBGA56 |
| S29PL127J70BFI000 | 8M X 16 FLASH 3V PROM, 70 ns, PBGA80 |
| S29XS064R0PBHW010 | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| S2C3R-1-12-H | 4000 MHz - 12000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2 dB INSERTION LOSS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N11FFVR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128N11TAI010 | 制造商:Spansion 功能描述:SPZS29GL128N11TAI010 FLSH MEM EOL161008 |
| S29GL128N11TFA020 | 制造商:Spansion 功能描述: |
| S29GL128N11TFI010H | 制造商:Spansion 功能描述: |
| S29GL128N11TFI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:Flash - NOR IC 制造商:Spansion 功能描述:NOR Flash, 8M x 16, 56 Pin, Plastic, TSSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。