參數(shù)資料
型號(hào): S29GL128N11FAI012
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁(yè)數(shù): 9/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N11FAI012
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
7
D a t a S h e e t
Block Diagram
** A
Max
GL512N = A24, A
Max
GL256N = A23, A
Max
GL128N = A22
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
WP#/ACC
BYTE#
CE#
OE#
STB
STB
DQ15
DQ0 (A-1)
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A
Max
**–A0
相關(guān)PDF資料
PDF描述
S29GL128N11FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N11FAI020 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray
S29GL128N11FAI023 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R
S29GL128N11FAIS30 制造商:Spansion 功能描述:
S29GL128N11FFA010 制造商:Spansion 功能描述:
S29GL128N11FFA013 制造商:Spansion 功能描述: