參數(shù)資料
型號(hào): S29GL128N11FAI012
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁數(shù): 85/100頁
文件大?。?/td> 952K
代理商: S29GL128N11FAI012
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
83
D a t a S h e e t
AC Characteristics
Figure 17. Data# Polling Timings
(During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ6–DQ0
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
1.
2.
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
t
OE
for data polling is 45 ns when V
IO
= 1.65 to 2.7 V and is 35 ns when V
IO
= 2.7 to 3.6 V
相關(guān)PDF資料
PDF描述
S29GL128N11FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N11FAI020 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray
S29GL128N11FAI023 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R
S29GL128N11FAIS30 制造商:Spansion 功能描述:
S29GL128N11FFA010 制造商:Spansion 功能描述:
S29GL128N11FFA013 制造商:Spansion 功能描述: