參數(shù)資料
型號(hào): S29GL128N11FAI012
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁(yè)數(shù): 5/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N11FAI012
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
3
D a t a S h e e t
The device reduces power consumption in the
standby mode
when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The
Secured Silicon Sector
provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
The
W rite Protect ( W P# / ACC)
feature protects the first or last sector by asserting a logic
low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing experience to pro-
duce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is pro-
grammed using hot electron injection.
相關(guān)PDF資料
PDF描述
S29GL128N11FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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