- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365393 > S29GL128N11FAI012 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL128N11FAI012 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, FBGA-64 |
| 文件頁數(shù)： | 68/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N11FAI012 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁當(dāng)前第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁
66
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Table 15. Sector Protection Commands (x8)
Command Sequence
( Notes)
Command Set Entry (
5
)
Program (
6
)
Read (
6
)
Command Set Exit (
7
)
Command Set Entry (
5
)
Program (
8
)
C
Bus Cycles ( Notes
1
–
4
)
3rd/ 10th
Addr
Data
AAA
40
1st/ 8th
Addr
AAA
XXX
00
XXX
AAA
XXX
00
07
00
05
XX
AAA
XXX
XXX
SA
XXX
AAA
XXX
XXX
XXX
AAA
XXX
XXX
SA
XXX
2nd/ 9th
Addr
555
XXX
4th/ 11th
Addr
5th
6th
7th
Data
AA
A0
Data
90
AA
A0
PWD0
PWD7
25
PWD5
90
AA
A0
80
RD(0)
90
AA
A0
RD(0)
90
AA
A0
A0
RD(0)
90
Data
55
Data
Data
Addr
Data
Addr
Data
Addr
Data
Lock
Register
Bits
3
2
1
2
3
2
XXX
555
PWAx
01
00
55
Password
Protection
AAA
60
PWDx
PWD1
Read (
9
)
8
02
PWD2
03
PWD3
04
PWD4
05
PWD5
06
PWD6
Unlock (
10
)
11
00
06
XX
555
SA
00
03
00
07
PWD0
PWD7
01
00
PWD1
29
02
PWD2
03
PWD3
04
PWD4
PWD6
00
55
00
30
Command Set Exit (
7
)
Command Set Entry (
5
)
PPB Program (
11
)
All PPB Erase (
11
,
12
)
PPB Status Read
Command Set Exit (
7)
Command Set Entry (
5
)
PPB Lock Bit Set
PPB Lock Bit Status Read
Command Set Exit (
7
)
Command Set Entry (
5
)
DYB Set
DYB Clear
DYB Status Read
Command Set Exit (
7
)
2
3
2
2
1
2
3
2
1
2
3
2
2
1
2
Non-Volatile
Sector
Protection (PPB)
AAA
C0
XXX
555
XXX
00
55
00
Global
Volatile Sector
Protection
Freeze
(PPB Lock)
AAA
50
XX
555
SA
SA
00
55
00
01
Volatile Sector
Protection
(DYB)
AAA
E0
XXX
00
Legend:
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector.
See Tables
2
–
4
for sector address ranges.
PWA = Password Address. Address bits A1 and A0 are used to select
each 16-bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If
unprotected, DQ0 = 1.
Notes:
1.
2.
3.
All values are in hexadecimal.
Shaded cells indicate read cycles.
Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return the device
to reading array data.
Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
4.
5.
6.
No unlock or command cycles required when bank is reading
array data.
Exit command must be issued to reset the device into read
mode; device may otherwise be placed in an unknown state.
Entire two bus-cycle sequence must be entered for each portion
of the password.
Full address range is required for reading password.
10. Password may be unlocked or read in any order. Unlocking
requires the full password (all seven cycles).
11. ACC must be at V
IH
when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure
to prevent over-erasure.
7.
8.
9.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N11FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
| S29GL128N11FAIS30 | 制造商:Spansion 功能描述: |
| S29GL128N11FFA010 | 制造商:Spansion 功能描述: |
| S29GL128N11FFA013 | 制造商:Spansion 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。