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參數(shù)資料
| 型號(hào)： | S29GL064M90FCIR83 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 256,128,64,32，3.0兆伏安只頁面模式閃存具有0.23レ米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 63/116頁 |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90FCIR83 |
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October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
61
D a t a S h e e t
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at spe-
cific addresses:
Note:
3.The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle that contains the autoselect command. The device then enters the autose-
lect mode. The system may read at any address any number of times without initiating another
autoselect command sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read
mode if the device was previously in Erase Suspend).
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte
random Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region
by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues
to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured
Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns
the device to normal operation.
Table 34
and
Table 35
show the address and data requirements
for both command sequences. Also, see
Secured Silicon Sector Flash Memory Region
for further
information.
Note that the ACC function and unlock bypass modes are not available when the Se-
cured Silicon Sector is enabled.
W ord Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writ-
ing two unlock write cycles, followed by the program set-up command. The program address and
data are written next, which in turn initiate the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device automatically provides internally gen-
erated program pulses and verifies the programmed cell margin.
Table 34
and
Table 35
show the
address and data requirements for the word program command sequence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode
and addresses are no longer latched. The system can determine the status of the program oper-
ation by using DQ7 or DQ6. See
Write Operation Status
for information on these status bits. Any
commands written to the device during the Embedded Program Algorithm are ignored.
Note that
the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program oper-
ation is in progress.
Note that a
hardw are reset
immediately terminates the program operation.
The program command sequence should be reinitiated once the device returns to the read mode,
to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Pro-
gramming to the same word address multiple times without intervening erases (incremental bit
programming) requires a modified programming method. For such application requirements,
please contact your local Spansion representative. Word programming is supported for backward
compatibility with existing Flash driver software and for occasional writing of individual words. Use
of write buffer programming (see below) is strongly recommended for general programming use
when more than a few words are to be programmed. The effective word programming time using
write buffer programming is approximately four times shorter than the single word programming
time.
Identifier Code
A7:A0
( x16)
A6:A-1
( x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TAIR32 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR33 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR40 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR42 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR43 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90FFIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR00 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TAIR3 | 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP |
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